| PART |
Description |
Maker |
| ITZ08F12P ITZ08F12B |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-247
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 16A I(C) | TO-220AB 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 16A条一（c）| TO - 220AB现有
|
Microsemi, Corp.
|
| P6LU-XXXXZH52 P6LU-0505ZH52 P6LU-053R3ZH52 P6LU-12 |
Input voltage:12V, output voltage /-15V ( /-34mA), 5.2KV isolated 1W unregulated dual output
Input voltage:24V, output voltage /-7.2V ( /-69mA), 5.2KV isolated 1W unregulated dual output
5.2 KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7 5.2千伏隔震1W的未稳压双输出SIP7
Input voltage:12V, output voltage /-5V ( /-100mA), 5.2KV isolated 1W unregulated dual output
|
PEAK[PEAK electronics GmbH]
|
| CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
| 1N4530 |
Diode 1.2KV 40A 2-Pin DO-5
|
New Jersey Semiconductor
|
| CCS050M12CM2 |
1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module
|
Cree, Inc
|
| FLC10 FLC10-200H |
DC/DC TH 1W 12-5V SIP 5.2KV RoHS Compliant: Yes
FIRE LIGHTER CIRCUIT
|
意法半导
STMicroelectronics
|
| CM600HA-24H |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,600A I(C)
|
Mitsubishi
|
| IRGC100B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展|芯片
|
Belden, Inc.
|
| F300R06KF |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 300A I(C) | MODULE-S 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 300一（c）|模块
|
Vishay Intertechnology, Inc.
|
| QM50TB24 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1.2KV五（巴西）总裁| 50A条一（c
|
Mitsubishi Electric, Corp.
|
